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High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

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8 Author(s)
Kuszelewicz, R. ; Laboratoire de Photonique et Nanostructures, Route de Nozay, Marcoussis 91460, France ; Benoit, J.-M. ; Barbay, S. ; Lemaitre, A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3682466 

Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy and temperature- and time-resolved photoluminescence. The control of the recombination lifetime (50 ps-1.25 ns) and of the dot density (5.10–8-2.1011 cm–3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non-linear dispersive materials as well as fast saturable absorbers.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 4 )

Date of Publication:

Feb 2012

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