By Topic

Silicon High-Order Coupled-Microring-Based Electro-Optical Switches for On-Chip Optical Interconnects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Xianshu Luo ; Inst. of Microelectron., Agency for Sci., Singapore, Singapore ; Junfeng Song ; Shaoqi Feng ; Poon, A.W.
more authors

We demonstrate an electro-optically (EO) tunable switch using tenth-order coupled-microring resonators in silicon-on-insulator using complementary metal-oxide-semiconductor fabrication technology. The measured drop-port transmission spectra show box-like transmission passband with ~100-GHz bandwidth and ~50-dB extinction ratio. With a DC voltage supply to the integrated p-i-n diodes surrounding the microrings, the optical switch shows, respectively, ~10 and ~45-dB on/off ratios from throughputand drop-port. The measured EO switching times are ~1 ns upon a 1.2-Vpp low-speed driving signal and a DC power consumption of ~37 mW. Up to 30-Gb/s pseudorandom binary sequence (231-1) signal transmissions suggest high-data-rate signal switching capability.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 10 )