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Logic Inverter Implemented with CVD-Assembled Graphene FET on Hexagonal Boron Nitride

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4 Author(s)
Edwin Kim ; College of Nanoscale Science and Engineering, State University of New York, Albany, U.S.A. ; Nikhil Jain ; Yang Xu ; Bin Yu

We demonstrate one of the basic building elements of graphene electronics, logic inverter, based on graphene-on-boron nitride material system. The inverter is composed of two adjacent graphene-channel field-effect transistors (GFETs). The impacts of hexagonal boron nitride, a new supporting substrate material, on major device performance metrics of GFET such as small-signal transconductance g m and effective carrier mobility μeff are explored. The prototype of logic inverter is demonstrated on a single sheet of CVD-assembled monolayer graphene based on the unique ambipolar conduction behavior of the 2-D nanoscale carbon system.

Published in:

IEEE Transactions on Nanotechnology  (Volume:11 ,  Issue: 3 )