High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

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This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

Published in:
Applied Physics Letters (Volume:100 , Issue: 7 )

Date of Publication: Feb 2012

Page(s):: 071606 - 071606-4
ISSN :: 0003-6951
Digital Object Identifier :: 10.1063/1.3687199
Product Type:: Journals & Magazines

Date of Current Version :: 23 February 2012
Issue Date :: Feb 2012

Author(s)

Jussila, H.
Department of Micro and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
Mattila, P. ; Oksanen, J. ; Perros, A. ; Riikonen, J. ; Bosund, M. ; Varpula, A. ; Huhtio, T. ; Lipsanen, H. ; Sopanen, M.