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A 40-Gb/s Optical Transceiver Front-End in 45 nm SOI CMOS

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2 Author(s)
Joohwa Kim ; Electr. & Comput. Eng. Dept., Univ. of California at San Diego, La Jolla, CA, USA ; Buckwalter, J.F.

A low-power, 40-Gb/s optical transceiver front-end is demonstrated in a 45-nm silicon-on-insulator (SOI) CMOS process. Both single-ended and differential optical modulators are demonstrated with floating-body transistors to reach output swings of more than 2 VPP and 4 VPP, respectively. A single-ended gain of 7.6 dB is measured over 33 GHz. The optical receiver consists of a transimpedance amplifier (TIA) and post-amplifier with 55 dB ·Ω of transimpedance over 30 GHz. The group-delay variation is ±3.9 ps over the 3-dB bandwidth and the average input-referred noise density is 20.5 pA/(√Hz) . The TIA consumes 9 mW from a 1-V supply for a transimpedance figure of merit of 1875 Ω /pJ. This represents the lowest power consumption for a transmitter and receiver operating at 40 Gb/s in a CMOS process.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:47 ,  Issue: 3 )

Date of Publication:

March 2012

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