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Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses

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8 Author(s)
Laurent Negre ; STMicroelectronics, Technology Platform Sustaining/Electrical Characterization & Reliability, Crolles, France ; David Roy ; Florian Cacho ; Patrick Scheer
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In the framework of MOSFET reliability for RF/AMS applications, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stresses with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:47 ,  Issue: 5 )