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Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses

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8 Author(s)
Negre, L. ; Technol. Platform Sustaining/Electr. Characterization & Reliability, STMicroelectron., Crolles, France ; Roy, D. ; Cacho, F. ; Scheer, P.
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In the framework of MOSFET reliability for RF/AMS applications, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stresses with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:47 ,  Issue: 5 )

Date of Publication:

May 2012

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