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Growth and scintillation properties of Pr doped (Lu,Y)3(Ga,Al)5O12 single crystals

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9 Author(s)
Kamada, K. ; Mater. Res. Lab., Furukawa Co., Ltd., Tsukuba, Japan ; Yanagida, T. ; Pejchal, J. ; Nikl, M.
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Pr: (Lu,Y)3(Ga,Al)5O12 single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu3+ sites with Y3+ and Al3+ sites with Ga3+ in garnet structure has been studied. Pr3+ 5d-4f emission within 300-400nm accompanied by weak Pr3+ 4f-4f emission in 480-650nm are observed in Ga 0-60 at.% substituted samples. Ga 80 at.% substituted sample shows only Pr3+ 4f-4f emission. The light output of Pr1%:Lu2Y1Ga2Al2O12 sample was almost same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay shows 17.9ns (93%) and 68.0ns (7%) using the PMT and digital oscilloscope TDS5032B. Slower decay components are reduced by Ga and Y substitution in LuAG structure.

Published in:

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE

Date of Conference:

23-29 Oct. 2011

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