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Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions

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10 Author(s)
Honjo, H. ; Green Innovation Research Laboratories, NEC Corporation, Tsukuba, Japan ; Fukami, S. ; Suzuki, T. ; Nebashi, R.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3671437 

A wire with perpendicular magnetic anisotropy (PA) is suitable for domain-wall-motion (DWM) cells because its critical current is small. However, it is not easy to design a cell consisting of a high magnetoresistance (MR) ratio magnetic tunneling junction (MTJ) and a DWM using PA material alone. We propose a combination of a PA–DWM element and in-plane (IP) MTJ for detection. The structure can be designed in a way that reduces the write current by the use of a perpendicular layer, yet maintains a high MR ratio by the independent use of in-plane material stacks. We fabricated a cell and ran tests to determine its read and write properties. A critical write current of 700 μA and a MR ratio of 50% were achieved. These properties are almost the same as when a DWM wire and in-plane MTJ are fabricated separately, which means it is possible to design the two elements independently.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 7 )

Date of Publication:

Apr 2012

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