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In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

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10 Author(s)
Sanghyeon Kim ; Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan ; Yokoyama, Masafumi ; Taoka, Noriyuki ; Nakane, R.
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We have demonstrated InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with self-aligned Co-InGaAs source/drain (S/D). The fabricated MOSEFETs exhibited excellent transistor operation and an on/off ratio of 104 without any S/D ion implantation. It was found that the Co-InGaAs alloys can be formed by direct reaction of Co and InGaAs during annealing at low temperature and that the unreacted Co is selectively etched from Co-InGaAs by an HCl solution without significant etching of Co-InGaAs. We also found that the Co-InGaAs alloys have low sheet resistance of less than 50 Ω/square and relatively low Schottky barrier height of 0.12 eV against electrons in InGaAs with high thermal stability.

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Applied Physics Letters  (Volume:100 ,  Issue: 7 )