Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3685505
We have demonstrated InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with self-aligned Co-InGaAs source/drain (S/D). The fabricated MOSEFETs exhibited excellent transistor operation and an on/off ratio of 104 without any S/D ion implantation. It was found that the Co-InGaAs alloys can be formed by direct reaction of Co and InGaAs during annealing at low temperature and that the unreacted Co is selectively etched from Co-InGaAs by an HCl solution without significant etching of Co-InGaAs. We also found that the Co-InGaAs alloys have low sheet resistance of less than 50 Ω/square and relatively low Schottky barrier height of 0.12 eV against electrons in InGaAs with high thermal stability.