By Topic

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Sanghyeon Kim ; Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan ; Yokoyama, Masafumi ; Taoka, Noriyuki ; Nakane, R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3685505 

We have demonstrated InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with self-aligned Co-InGaAs source/drain (S/D). The fabricated MOSEFETs exhibited excellent transistor operation and an on/off ratio of 104 without any S/D ion implantation. It was found that the Co-InGaAs alloys can be formed by direct reaction of Co and InGaAs during annealing at low temperature and that the unreacted Co is selectively etched from Co-InGaAs by an HCl solution without significant etching of Co-InGaAs. We also found that the Co-InGaAs alloys have low sheet resistance of less than 50 Ω/square and relatively low Schottky barrier height of 0.12 eV against electrons in InGaAs with high thermal stability.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 7 )