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Browse Journals & Magazines > Applied Physics Letters ...> Volume:100 Issue:7 Help

Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

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4 Author(s)
Demkov, A.A. ; Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA ; Seo, H. ; Zhang, X. ; Ramdani, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3685508 

We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO3 interface, and identify Sr aluminide SrAl2 as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.

Published in:
Applied Physics Letters  (Volume:100 ,  Issue: 7 )

Date of Publication: Feb 2012

Page(s):
071602 - 071602-4
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3685508
Product Type:
Journals & Magazines
Date of Current Version :
16 February 2012
Issue Date :
Feb 2012

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