(1122) GaN layers were grown by metal-organic vapor phase epitaxy on (1122) bulk GaN substrates and (1010) sapphire substrates. The growth temperature was varied between 950 and 1050 °C and the total reactor pressure between 50 and 600 mbar. The growth conditions show a strong impact on the yellow band luminescence properties, while weak impact on the threading dislocation density was observed. The layer morphologies exhibit undulations with two periods along GaN  and one period along . The different period lengths are connected to anisotropic adatom surface diffusion lengths. Arrow like features on the surface originate from the interference of the undulations along  and .