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A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface

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22 Author(s)
Chulbum Kim ; Semicond. Div., Samsung Electron., Hwasung, South Korea ; Jinho Ryu ; Taesung Lee ; Hyunggon Kim
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A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to 32 KB. It also features a newly developed asynchronous DDR interface that can support up to the maximum bandwidth of 400 MB/s. To improve performance and reliability, on-chip randomizer, soft data readout, and incremental bit line pre-charge scheme have been developed.

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Solid-State Circuits, IEEE Journal of  (Volume:47 ,  Issue: 4 )