By Topic

Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Shunsuke Fukami$^{1}$ Center for Spintronics Integrated Systems, , Tohoku University, , Sendai, , Japan ; Nobuyuki Ishiwata ; Naoki Kasai ; Michihiko Yamanouchi
more authors

We studied a scaling property of a three-terminal domain wall (DW)-motion device, which is one of the promising candidates for future low-power nonvolatile memory and logic-in-memory architecture. Using several assumptions, we derived the scaling factor of the switching current, switching time, resistance of the write-current path, and data storage stability. We also quantitatively evaluated the variation of these parameters with the device size. It was found that the switching current and time decrease almost linearly with the device size, while the variation of the resistance of the write-current path is negligible. The switching current and time for 32-nm-wide device are less than 100 μA and 2 ns, respectively. A required critical field which assures a sufficient thermal stability of stored data was calculated for each generation. Furthermore, future issues and intrinsic limiter for the size reduction were discussed.

Published in:

IEEE Transactions on Magnetics  (Volume:48 ,  Issue: 7 )