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3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation

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2 Author(s)
Munteanu, D. ; CNRS, IM2NP UMR CNRS 6242, ; Autran, J.

The bipolar amplification and charge collection in Junctionless Double-Gate MOSFETs (JL-DGFET) submitted to heavy-ion irradiation are investigated. The transient response of JL-DGFET is compared to that of conventional devices operating in inversion-mode (IM-DGFET). We show that the bipolar amplification is higher in junctionless devices than in conventional inversion-mode devices mainly due to the higher doping levels in the channel which induce larger floating body effects.

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Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 4 )