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Electrical Characterization of Advanced MIM Capacitors With {\rm ZrO}_{2} Insulator for High-Density Packaging and RF Applications

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8 Author(s)
Thomas Bertaud ; Innovations for High Performance Microelectronics, Frankfurt (Oder), Germany ; Cédric Bermond ; Serge Blonkowski ; Christophe Vallee
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This paper deals with the electrical and wideband frequency characterizations of metal-insulator-metal (MIM) capacitors integrating the medium-k material ZrO2. First, the in situ material electrical properties are characterized in a frequency range from dc up to 5 GHz by using a microstrip waveguide method. The loss tangent and the permittivity are extracted with frequencies up to 5 GHz. We then investigate the evolution with frequency of the electrical parameters, such as capacitance density, quality factor, temperature coefficient of capacitance, voltage coefficient of capacitance, and cut-off frequency for MIM capacitors which incorporate ZrO2 dielectric layers with thickness from 10 to 45 nm.

Published in:

IEEE Transactions on Components, Packaging and Manufacturing Technology  (Volume:2 ,  Issue: 3 )