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A Self-Rectifying \hbox {HfO}_{x} -Based Unipolar RRAM With NiSi Electrode

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11 Author(s)
Tran, X.A. ; Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore ; Zhu, W.G. ; Gao, B. ; Kang, J.F.
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In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 °C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition).

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Electron Device Letters, IEEE  (Volume:33 ,  Issue: 4 )