A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

In this letter, a unipolar resistive switching random access memory (RAM) based on
$\hbox{NiSi/HfO}_{x}/\hbox{TiN}$
structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (
$>\hbox{10}^{3}$
at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio
$(> \hbox{10}^{2})$
and good retention characteristics (
$> \hbox{10}^{5} \ \hbox{s}$
at 125
$^{\circ}\hbox{C}$
); and 4) wide readout margin for high-density cross-point memory devices (number of word lines
$>\hbox{10}^{6}$
for the worst case condition).