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Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

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7 Author(s)
Meneghini, M. ; Dept. of Inf. Eng., Univ. of Padova, Padova, Italy ; de Santi, C. ; Ueda, T. ; Tanaka, T.
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This letter describes an extensive analysis of the time- and field-dependent trapping processes that occur in GaN-based gate injection transistors exposed to high drain voltage levels. Results indicate that-even if the devices do not suffer from current collapse-continuous exposure to high drain voltages can induce a remarkable increase in the on-resistance (Ron). The increase in Ron can be recovered by leaving the device in rest conditions: Temperature-dependent analysis indicates that the activation energy of the detrapping process is equal to 0.47 eV. By time-resolved electroluminescence characterization, we show that this effect is related to the capture of electrons in the gate-drain access region. Finally, we show that charge emission can be significantly accelerated through the injection of holes from the gate.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 3 )