By Topic

\hbox {InGaP/GaAs}_{0.57}\hbox {P}_{0.28} \hbox {Sb}_{0.15}/\hbox {GaAs} Double HBT With Weakly Type-II Base/Collector Junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yu-Chung Chin ; Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan ; Hao-Hsiung Lin ; Chao-Hsing Huang

We report on the dc characteristics of an InGaP/ GaAs0.57P0.28Sb0.15/GaAs double heterojunction bipolar transistor (DHBT). In comparison with control InGaP/GaAs single heterojunction bipolar transistors (SHBTs), the DHBT shows a lower turn-on voltage (VBE, on) by ~ 70 mV, a lower knee voltage up to Jc ~ 40 kA/cm2, and less temperature-sensitive current gain. The validity of reciprocity in the Gummel plot suggests no potential spikes at the emitter/base and base/collector (BC) junctions of the DHBT. By considering the differences, in terms of the built-in voltage of the BC junction, the Fermi level in the base, and the renormalized energy gap of the base, between the GaAsPSb DHBT and the control InGaP/GaAs SHBT, we conclude that the heavily p-doped GaAs0.57P0.28Sb0.15 base and the lightly n-doped GaAs collector are in weakly type-II band alignment with a conduction and valence band offset of 44 and 221 meV, respectively. These findings indicate that GaAsPSb is a promising base material for DHBTs operating at high temperature and low VBE, on conditions without suffering from the collector current blocking.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 4 )