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\hbox {InGaP/GaAs}_{0.57}\hbox {P}_{0.28} \hbox {Sb}_{0.15}/\hbox {GaAs} Double HBT With Weakly Type-II Base/Collector Junction

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3 Author(s)
Yu-Chung Chin ; Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Lin, Hao-Hsiung ; Chao-Hsing Huang

We report on the dc characteristics of an InGaP/ GaAs0.57P0.28Sb0.15/GaAs double heterojunction bipolar transistor (DHBT). In comparison with control InGaP/GaAs single heterojunction bipolar transistors (SHBTs), the DHBT shows a lower turn-on voltage (VBE, on) by ~ 70 mV, a lower knee voltage up to Jc ~ 40 kA/cm2, and less temperature-sensitive current gain. The validity of reciprocity in the Gummel plot suggests no potential spikes at the emitter/base and base/collector (BC) junctions of the DHBT. By considering the differences, in terms of the built-in voltage of the BC junction, the Fermi level in the base, and the renormalized energy gap of the base, between the GaAsPSb DHBT and the control InGaP/GaAs SHBT, we conclude that the heavily p-doped GaAs0.57P0.28Sb0.15 base and the lightly n-doped GaAs collector are in weakly type-II band alignment with a conduction and valence band offset of 44 and 221 meV, respectively. These findings indicate that GaAsPSb is a promising base material for DHBTs operating at high temperature and low VBE, on conditions without suffering from the collector current blocking.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 4 )

Date of Publication:

April 2012

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