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Asymmetric Carrier Conduction Mechanism by Tip Electric Field in \hbox {WSiO}_{X} Resistance Switching Device

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10 Author(s)
Yong-En Syu ; Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Ting-Chang Chang ; Tsai, Tsung-Ming ; Geng-Wei Chang
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Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 3 )