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Analytical modeling and ATLAS™ based simulation of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMGSGOI) MOSFETs

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4 Author(s)
Kumar, M. ; Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India ; Dubey, Sarvesh ; Tiwari, Pramod Kumar ; Jit, S.

An analytical study of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMG-SGOI) MOSFETs has been presented in this paper. It has been shown that DMG-SGOI structure alleviates the short-geometry problems like short-channel effects (SCEs), drain induced barrier lowering (DIBL) and hot-carrier effects (HCEs) more efficiently than strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFET structures.

Published in:

Multimedia, Signal Processing and Communication Technologies (IMPACT), 2011 International Conference on

Date of Conference:

17-19 Dec. 2011