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High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

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3 Author(s)
Zippelius, Bernd ; Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan ; Suda, Jun ; Kimoto, T.

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In this paper, the impact of high-temperature annealing of 4H silicon carbide (SiC) on the formation of intrinsic defects, such as Z1/2 and EH6/7, and on carrier lifetimes was studied. Four nitrogen-doped epitaxial layers with various initial concentrations of the Z1/2- and EH6/7-centers (1011-1014cm-3) were investigated by means of deep level transient spectroscopy and microwave photoconductance decay. It turned out that the high-temperature annealing leads to a monotone increase of the Z1/2- and EH6/7-concentration starting at temperatures between 1600 °C and 1750 °C, depending on the initial defect concentration. In the case of samples with high initial defect concentration (1014cm-3) a distinct decrease in Z1/2- and EH6/7-concentration in the temperature range from 1600 °C to 1750 °C was observed, being consistent with previous reports. For higher annealing temperatures (Tanneal≥1750C), the defect concentration is independent of the samples’ initial values. As a consequence, beside the growth conditions, such as C/Si ratio, the thermal post-growth processing has a severe impact on carrier lifetimes, which are strongly reduced for samples annealed at high temperatures.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 3 )