Referenced Items are not available for this document.
Effects of annealing time on the electrical properties of Y
In this work, the effects of annealing time (15, 30 [11], 45 minutes) on the MOS characteristics of RF magnetron sputtered Y203 gate oxide on Si substrate have been studied.
Published in:
Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
Date of Conference: 5-7 Jan. 2012
- Page(s):
- 1 - 2
- Print ISBN:
- 978-1-4577-0799-5
- INSPEC Accession Number:
- 12540521
- Conference Location :
- Johor Bahru
- Digital Object Identifier :
- 10.1109/ESciNano.2012.6149686
- Product Type:
- Conference Publications
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