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III-Nitrides semiconductor compound has been well recognized and become potential material for optoelectronics device applications as it has superior properties such as large and direct band gap, high-saturation velocity and high breakdown field . High quality III-Nitrides materials have been grown by various methods and molecular beam technique (MBE) has become one of the leading growth techniques for nitrides as it offers possibility of in-situ monitoring of the growth process. This is demonstrated by the possible of various optoelectronic devices such as LED, photodetector and solar cells [2, 3]. Nevertheless, there are still issues in the growth process of nitrides material, particularly in producing highly conductive p-type doping in GaN. This is due to deep acceptor level of Mg atoms and also the solubility limit of Mg in GaN  that leads to high resistivity and low mobility.