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Two dimensional current simulation of amorphous silicon thin-film transistors with extracted density of states by C-V characteristics and mobility measurement

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4 Author(s)
Seunghyun Jang ; Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea ; Jaehong Lee ; Jaeho Lee ; Hyungcheol Shin

The density of states (DOS) of amorphous silicon (a-Si) was extracted by multifrequency Capacitance-Voltage (C-V) characteristics and mobility measurement and applied to two dimensional TCAD simulation. It is well known that the DOS definitely influences current characteristics of TFT devices [1]. Thus, DOS distribution should be primarily considered on TFT characteristics simulation. In order to validate extracted DOS, the simulation results were compared to experimental data.

Published in:

Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on

Date of Conference:

5-7 Jan. 2012