Referenced Items are not available for this document.
The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency (fT) enhancement is achieved for the multifinger device under 0.051% biaxial tensile strain. For LDMOS with annular layout, the fT enhancement is increased to 3.7% due to the various channel directions. Our results suggest the strain technology can be adopted in LDMOS for RF applications. The transconductance and gate capacitance were also extracted to clearly demonstrate the fT variations.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
4
)
Date of Publication: April 2012
- Page(s):
- 471 - 473
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12617663
- Digital Object Identifier :
- 10.1109/LED.2011.2182494
- Product Type:
- Journals & Magazines
- Date of Publication :
- 07 February 2012
- Date of Current Version :
- 22 March 2012
- Issue Date :
- April 2012
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
