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Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube field-effect transistors

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2 Author(s)
Ji Cao ; Nanoelectronic Devices Laboratory (Nanolab), Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland ; Ionescu, A.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3682085 

Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube (CNT) field-effect transistors (CNFETs) have been demonstrated. A nano-precision assembly method using resist-assisted ac-dielectrophoresis is applied. Superior I-V characteristics controlled by two independent lateral gates spaced sub-100 nm away from the CNT body are experimentally observed and studied. The dual-gate operation mode effectively boosts the device performance: 34% smaller subthreshold slope, three times larger on-current, and four times higher transconductance. The proposed dual-gate suspended-body CNFETs hold promise for bottom-up fabrication of advanced complementary metal-oxide-semiconductor circuits and nano-electro-mechanical systems devices, such as tunable/switchable resonators for sensing and radio-frequency applications.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 6 )

Date of Publication:

Feb 2012

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