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A Comparative Pmos Study Of 33a Nitrided Oxides Prepared By Either N20 Or Nitrogen Implant Before Gate Oxidation For 0.18-o.13/spl mu/m Cmos Technologies

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First Page of the Article

Published in:

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Date of Conference:

3-5 June 1997