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19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon: A Loss Analysis by Means of Three-Dimensional Simulations

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5 Author(s)
Petermann, J. ; Inst. for Solar Energy Res. Hamelin, Emmerthal, Germany ; Ohrdes, T. ; Altermatt, Pietro P. ; Eidelloth, S.
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We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum efficiency measurements and reproduced by 3-D simulations using Sentaurus Device. Since such a device simulation does not include resistive losses in the metallization, we use a network simulation to account for losses caused by the grid. Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 4 )