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A quantum model for light emission performance of carbon nanotube field effect transistor

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3 Author(s)
Aziziyan, M.R. ; Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran ; Ahmadi, V. ; Moghadam, N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3681787 

We propose a full quantum model based on non-equilibrium Green function method to simulate short channel, ohmic-carbon nanotube field effect transistor as light emitter. We consider carrier annihilation using self-energy concept in non-ballistic regime, regarding current conservation. Using this model, we calculate radiative recombination rate and electroluminescence spectrum of device. Since, higher bias voltage causes higher carrier injection, we expect to observe more recombination rate by increasing drain or gate voltage. Variation of gate voltage can shift the electroluminescence peak due to slight band gap change. The device current confirms that the electrical and optical properties of device are correlated.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 5 )

Date of Publication:

Jan 2012

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