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Position dependent measurement of single event transient voltage pulse shapes under heavy ion irradiation

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6 Author(s)
Schweiger, K. ; Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria ; Hofbauer, M. ; Dietrich, H. ; Zimmermann, H.
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A CMOS inverter in 90 nm CMOS bulk technology was exposed to heavy ion radiation (Au-197) at a micro-beam facility. The targeted inverter occupies an area of 6 3 m2. The resulting single event transient (SET) voltage pulses at the output were measured using an on-chip analogue sense amplifier. The output of the amplifier was recorded with a 15 GHz real-time oscilloscope. Depending on the location of the ion hits strongly different pulse shapes were observed.

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Electronics Letters  (Volume:48 ,  Issue: 3 )