Referenced Items are not available for this document.
An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large , including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
3
)
Date of Publication: March 2012
- Page(s):
- 336 - 338
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12543526
- Digital Object Identifier :
- 10.1109/LED.2011.2181153
- Product Type:
- Journals & Magazines
- Date of Publication :
- 03 February 2012
- Date of Current Version :
- 20 February 2012
- Issue Date :
- March 2012
- Sponsored by :
- IEEE Electron Devices Society
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