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Capacitance Measurements of Two-Dimensional and Three-Dimensional IC Interconnect Structures by Quasi-Static C V Technique

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3 Author(s)
Stucchi, M. ; Interuniv. Microelectron. Center, Leuven, Belgium ; Velenis, D. ; Katti, G.

In this paper, the quasi-static - (QSCV) measurement technique is applied to measure capacitance of 2-D (planar) and 3-D IC interconnect test structures. The advantages of the quasi-static approach such as the immunity from frequency dependence effects and the capability of measuring small capacitance values in the 100-fF range are particularly attractive for the characterization of the interconnect capacitance in planar and vertical architectures with small dimensions. Issues related to the QSCV measurements of leaky capacitors are analyzed and quantified. The capacitance of different 2-D and 3-D interconnect structures is measured, and the QSCV results are compared with capacitance values extracted from impedance measurements of the same structures in the frequency domain.

Published in:
Instrumentation and Measurement, IEEE Transactions on  (Volume:61 ,  Issue: 7 )

Date of Publication: July 2012

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