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Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process

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5 Author(s)
Quemerais, T. ; STMicroelectron., Crolles, France ; Moquillon, L. ; Fournier, J. ; Benech, P.
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A hot carrier ageing model previously validated on a one-stage 60-GHz power amplifier (PA) is demonstrated to be able to predict the degradation of the characteristic parameters for multistage high-performance millimeter-wave (mmW) PAs. The increase in the threshold voltage, the decrease in the transconductance, and the output conductance of the MOSFETs caused by hot carriers leads to a degradation in performance of the PAs. Consequently, by using this ageing model, the mmW PA lifetime can be extracted. A new PA is then designed, taking into account the ageing effects, and is shown to be reliable during ten years. This amplifier exhibits a power gain of 20 dB, an output 1-dB compression point of 12.5 dBm with 6.6% power-added efficiency, and a saturated output power of 16 dBm at 60 GHz.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 4 )