By Topic

Design of a Wideband High-Voltage High-Efficiency BiCMOS Envelope Amplifier for Micro-Base-Station RF Power Amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Myoungbo Kwak ; Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, San Diego, CA, USA ; Kimball, D.F. ; Presti, C.D. ; Scuderi, Ant.
more authors

A high-performance bipolar-CMOS-DMOS (BCD) monolithic envelope amplifier for micro-base-station power amplifiers (PAs) is presented. Measurement of the BCD high-voltage (VDD = 15 V) envelope amplifier shows an efficiency of 72% using 7.7-dB peak-to-average ratio WCDMA input signals at an average envelope amplifier output power above 3 W. A WCDMA envelope-tracking RF PA at 2.14 GHz, including a GaN field-effect transistor RF stage, has an overall drain efficiency above 51%, with a normalized power root-mean-square error below 1.2% and an adjacent channel leakage ratio of -49 dBc at 5-MHz offset using memory-effect mitigation digital pre-distortion, at an average output power above 2 W and a gain of 10 dB.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 6 )