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Embedded Analog Nonvolatile Memory With Bidirectional and Linear Programmability

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4 Author(s)
Yi-Da Wu ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Kok-Choon Cheng ; Chih-Cheng Lu ; Hsin Chen

Nonvolatile storage of analog values with floating-gate transistors has been useful for many applications. While most proposed analog nonvolatile memory devices employ electron tunneling to modify floating-gate charges, this brief presents an embedded analog nonvolatile memory device that employs only hot-carrier injections to achieve bidirectional programmability. Without using electron tunneling, the proposed circuit not only avoids multiplexing high-voltage signals but also facilitates direct storage of new data. In addition, each memory cell incorporates a simple inverter to make the programming process nearly linear, facilitating bidirectional and linear adaptability for neuromorphic systems. A prototype array of the analog memory has been fabricated with the standard CMOS 0.35- technology. The chip includes a simple on-chip comparator to program the analog memory accurately and automatically by negative feedback. The effective resolution is more than 8 bits over a dynamic range of 1.4 V. The intercell disturbance during programming and the data retention ability are also examined.

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:59 ,  Issue: 2 )