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Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment

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4 Author(s)
Chen, C.H. ; Department of Electronics Engineering, Chang Gung University, Taoyuan 33302, Taiwan ; Yang, C.W. ; Chiu, H.C. ; Fu, Jeffrey.S.

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In this study, enhancement-mode (E-mode) AlGaN/GaN HEMTs that underwent CHF3 and CF4 plasma treatment beneath the gate metal were fabricated. These treatments were applied because, although previous studies have formed AlF3 compound layers after fluorine-based plasma treatment to suppress the polarization-induced charge density, the surface negative charges still influenced the device gate leakage current and trap density. In the device in this study, unlike in previous CF4 plasma-treated GaN E-mode devices, the hydrogen atoms of the CHF3 plasma were introduced to compensate for vacancies by donating an electron to a vacancy acceptor level, thereby reducing the number of vacancy induced traps. Based on the measured subthreshold slope (SS) and the effective interface state density (Dit) results, the SS value of a CHF3-treated HEMT was 80 mV/decade and the Dit was 1.23 × 1012 cm-2. Moreover, the CHF3-treated HEMT exhibited a current gain cut-off frequency, a maximum oscillation frequency, and an output power of 6.7, 26, and 14.8 dBm (302 mW/mm), respectively. The 1/f noise measurement results of the CHF3-treated HEMT indicated that the flicker noise-induced generation-recombination noise and gate leakage-induced generation-recombination noise were also improved. Therefore, the CHF3-treated HEMT has great potential for use in low-distortion power amplifiers and logic control circuits.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 2 )