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Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes

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9 Author(s)
Zhang, Ning ; Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China ; Liu, Zhe ; Wei, Tongbo ; Zhang, Lian
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We report on the effect of a graded AlGaN electron blocking layer (GEBL) on the emission properties of InGaN/GaN multiple quantum wells light-emitting diode (LED). The adoption of GEBL in the LED enhances the electroluminescence intensity and reduces the wavelength blue-shift with increasing injection current. The light output power of the GEBL LED is enhanced by 163% and 415% at 20 and 350 mA, respectively. Moreover, the forward voltage of the GEBL LED is reduced by 0.38 V at the forward current of 20 mA.

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Applied Physics Letters  (Volume:100 ,  Issue: 5 )