Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3681797
We report on the effect of a graded AlGaN electron blocking layer (GEBL) on the emission properties of InGaN/GaN multiple quantum wells light-emitting diode (LED). The adoption of GEBL in the LED enhances the electroluminescence intensity and reduces the wavelength blue-shift with increasing injection current. The light output power of the GEBL LED is enhanced by 163% and 415% at 20 and 350 mA, respectively. Moreover, the forward voltage of the GEBL LED is reduced by 0.38 V at the forward current of 20 mA.