Referenced Items are not available for this document.
A New Stress Migration Failure Mode in Highly Scaled Cu/Low- 
Interconnects
A New Stress Migration Failure Mode in Highly Scaled Cu/Low-
We identify a new stress migration (SM) failure mode in Cu/low-k interconnects whereby voids are formed in very narrow trenches close to large Cu plates. Finite-element analysis shows that the new failure mode is generated by large stress gradients associated with geometry changes in highly scaled Cu interconnects. This work indicates that management of mechanical stresses will be an important issue for future development of reliable Cu/low- k interconnects.
Published in:
Device and Materials Reliability, IEEE Transactions on
(Volume:12
,
Issue:
2
)
Date of Publication: June 2012
- Page(s):
- 529 - 531
- ISSN :
- 1530-4388
- INSPEC Accession Number:
- 12769139
- Digital Object Identifier :
- 10.1109/TDMR.2012.2185497
- Product Type:
- Journals & Magazines
- Date of Publication :
- 01 February 2012
- Date of Current Version :
- 01 June 2012
- Issue Date :
- June 2012
- Sponsored by :
- IEEE Electron Devices Society
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