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Bipolar resistive switching of zinc-tin-oxide resistive random access memory

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6 Author(s)
Murali, S. ; Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA ; Rajachidambaram, J.S. ; Seung-Yeol Han ; Chih-Hung Chang
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Bipolar switching is reported for the first time using solution deposited amorphous zinc-tin-oxide (ZTO). The impact of compliance current (CC) on the SET voltage, the magnitude of the low and high resistance states, and the switching ratio is investigated for Al/ZTO/Ir resistive random access memory (RRAM) devices.

Published in:

Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on

Date of Conference:

15-18 Aug. 2011