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We report a straightforward process to fabricate carbon nanotube field-effect transistors based on random nanotube networks. This solution-based approach is simple, fast and reliable, which can be applied to printed electronics. We also investigated the transistor performance as a function of nanotube density, content of metallic nanotubes, and channel geometry. Our experiments show that increase of nanotube density results in consistent improvement of carrier mobility, until a threshold density is achieved. Finally, a simple percolation model based on the Monte Carlo method has been developed for simulating the electrical characteristics of the devices. The model offers a basis for further optimization of carbon nanotube network devices.
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Date of Conference: 15-18 Aug. 2011