By Topic

Fabrication of stable n-type thin-film transistor with Cs encapsulated single-walled carbon nanotubes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kato, T. ; Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan ; Hatakeyama, R. ; Osanai, Y.

Stable n-type thin film transistors (TFTs) are fabricated with Cs encapsulated single-walled carbon nanotubes (Cs@SWNTs). The transport property of SWNTs-TFTs clearly changes from p- to n-type characteristic after the Cs plasma irradiation. Based on the systematic investigations, it is revealed that there is an optimum ion energy for the effective Cs encapsulation, which is around 50 eV. Furthermore, it is also found that the n-type feature is stable even in water and high temperature (≤ 400 °C) conditions. This very stable n-type TFTs is important for the practical application of SWNTs-based thin film electronics.

Published in:

Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on

Date of Conference:

15-18 Aug. 2011