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The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 × 10-6 Ω-cm2 has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication.