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This work proposes a spatially charge tunneling method for program/erase (P/E) based on the drain-modulated Fowler-Nordheim (MFN) tunneling in a polycrystalline silicon channel charge-trap type flash memory device. The program mechanism and the simulation of the MFN are discussed. 2-bit operations based on MFN and channel hot electron injection were demonstrated. MFN 2-bit operation and conventional 2-bit operation present different transfer curves, indicating that charge is injected into the different regions. The MFN P/E operation provides flexibility in flash memory applications.