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Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

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4 Author(s)
Kuang, Y.J. ; Department of Physics, University of California, San Diego, La Jolla, California 92093, USA ; Sukrittanon, S. ; Li, H. ; Tu, C.W.

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We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from ∼1 × 107 to ∼5 × 108 cm-2 across the substrate. Typical diameters are ∼110 nm for GaP NWs and ∼220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is ∼0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

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Applied Physics Letters  (Volume:100 ,  Issue: 5 )