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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

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18 Author(s)
Abid, M. ; Georgia Institute of Technology/GT-Lorraine-UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France ; Moudakir, T. ; Orsal, G. ; Gautier, S.
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Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN template substrates. These structures make use of the transparency of BAlN in the deep UV and the high refractive index contrast between BAlN and AlN, which has been demonstrated to exceed 0.27 at 280 nm. 18-pair BAlN/AlN DBRs showed experimental peak reflectivity of 82% at 311 nm and a stop-bandwidth of 20 nm. At 282 nm, a 24-pair BAlN/AlN DBR structure is demonstrated with experimental peak reflectivity of 60% and stop-bandwidth of 16 nm.

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Applied Physics Letters  (Volume:100 ,  Issue: 5 )