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Electrical Properties of ITO/Crystalline-Silicon Contact at Different Deposition Temperatures

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3 Author(s)
de Cesare, G. ; Dept. of Electron. Eng., Univ. of Rome La Sapienza, Rome, Italy ; Caputo, D. ; Tucci, M.

In this letter, the effect of deposition temperature on the barrier height between indium tin oxide (ITO) and crystalline silicon (c-Si) is presented. ITO films have been deposited by RF magnetron sputtering in the range between room temperature and 200 °C on both p- and n-type doped c-Si substrates. From current-voltage and capacitance-voltage characteristics of the ITO/c-Si junctions, we found that ITO deposited on 1-Ω · cm n-type doped silicon forms a rectifying junction with barrier heights varying from 0.9 to 0.3 eV, while at room temperature, an ohmic behavior on 1-Ω · cm p-type c-Si is obtained.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 3 )

Date of Publication:

March 2012

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