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Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1-xSbx strain reducing layer

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3 Author(s)
Huang, Chia-Tze ; Department of Electrical Engineering, Graduate Institute of Electronics Engineering, and Graduate Institute of Photonics and Optoelectronics Engineering, National Taiwan University, Taipei 10617, Taiwan ; Chen, Yu-Cheng ; Lee, Si-Chen

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The effect of a GaAs1-xSbx strain reducing layer on the performance of InAs/GaAs quantum-dot infrared photodetectors was investigated. The results suggest that increasing Sb composition x from 0 to 0.2 leads to an enhanced peak response and a pronounced narrowing of the band width of the spectral response from 3.3 to 1.5 μm. For a photodetector with GaAs0.8Sb0.2 strain reducing layer, the best responsivity obtained is 533 mA/W, which is 380 times higher than that without strain reducing layer. In addition, the operating temperature increases from 50 to 90 K when increasing Sb composition from 0 to 0.2.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 4 )