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We report the effect of an electron blocking layer (EBL) on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes (LEDs). Electric-field-dependent ER measurements showed an enhanced piezoelectric field in LEDs with a p-AlGaN EBL compared with LEDs without EBL. In contrast, LEDs with a p-AlGaN EBL exhibited reduced blueshift and a sublinear increase of full width at half maximum in EL spectra at low current densities. These behaviors can be explained by the strong localization of injected carriers in dominant InGaN regions due to an increase of the piezoelectric field by subsequent growing EBL.